FDS6930B

Dual N-Channel Logic Le vel P o. werTrenc h. ®. MOSFET

Features ■ 5.5 A, 30 V. ■ ■ ■ ■ RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D2 D1 D1 D2 5 6 4 3 2 1 SO-8 Pin 1 S1 G1 S2 G2 7 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous

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