2SC3552

GENERAL DESCRIPTION. Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

VCESM Collector-emitter voltage peak value VBE = 0V - 1100 V
VCEO Collector-emitter voltage (open base) - 500 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 150 W
VCEsat Collector-emitter saturation voltage IC = 4.5A; IB = 1.0A - 3 V
VF Diode forward voltage IF = 4.5A 1.5 2.0 V
tf Fall time IC=4.5A,IB1=-IB2=0.8A,VCC=80V 0.3 1.0-