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Descrizione
FUJI POWER MOSFET. N-CHANNEL SILICON POWER MOSFET. Features. High speed switching. Low on-resistance
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 97
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 19
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK3683-01MR transistor (tr), nS: 13
Drain-source Capacitance (Cd), pF: 230
Maximum drain-source on-state resistance (Rds), Ohm: 0.29
Package: TO-220F