2SK2996 = K2996

Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)
High forward transfer admittance : |Yfs| = 6.8 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS 600 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate−source voltage VGSS ±30 V
DC (Note 1) ID 10
Drain current
Pulse (Note 1) IDP 30

Drain power dissipation (Tc = 25°C) PD 45 W
Single pulse avalanche energy
(Note 2) EAS 252 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C