FQPF11N50CF

FQPF11N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 11 A, 550 mΩ
Description
FQPF11N50CF — N-Channel QFET
® FRFET
® MOSFET
©2005 Fairchild Semiconductor Corporation
FQPF11N50CF Rev. C1
• 100% Avalanche Tested
• Fast Recovery Body Diode
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V,
ID = 5.5 A